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• W2001434579 abstract "The electrical characteristics of AlGaN/GaN high electron mobility transistors under the application of uniform in-plane tensile and compressive stress were measured. The results demonstrate the change of the drain–source Ids–Vds characteristics as a function of the external stress. The output current at Vds = 10 V increases linearly with the stress with the slope about 3 × 10−6 A MPa−1. It is associated with the piezoelectric effect and kink effect. Moreover, the magnitude of the kink effect is found to be affected by the stress. It displays a linear changing trend with the slope of 3.3 × 10−4 mS MPa−1 within the stress level. The energy band structure is suggested to be responsible for the dependence of the kink effect on the stress." @default.
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• W2001434579 date "2015-05-01" @default.
• W2001434579 modified "2023-09-30" @default.
• W2001434579 title "The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs" @default.
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• W2001434579 doi "https://doi.org/10.1016/j.microrel.2015.03.012" @default.
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