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• W2001520983 abstract "A problem of long standing in the high-temperature growth of 3C–SiC on Si has been the formation of pits at the SiC/Si interface. The research described in this paper addresses this problem through the use of organosilicon growth precursors and explores issues related to the mechanisms of pit formation. Specifically, this paper reports studies of 3C–SiC growth at 800 °C on hydrogen-terminated Si (001) 1 × 1 surfaces using dimethyl- and monomethyl silane under gas source molecular beam epitaxy conditions. In-situ analysis of the films by Auger electron spectroscopy and reflection high-energy electron diffraction along with ex-situ scanning electron microscopy and atomic force microscopy were used to gain insight concerning the details of the growth mechanism. The experimental variables, in addition to the growth species, included molecular flux and growth time. For growth using both dimethyl- and monomethyl silane, clear evidence for the out-diffusion, segregation, and participation of substrate Si in the growth process was found. The molecular flux at the substrate surface was found to play a key role in determining the microstructure of the initial SiC layers and the SiC/Si interface. The effective sticking coefficient for both gas species was found to be on the order of ∼ 0.13. Conditions under which interfacial pits may be eliminated are identified." @default.
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• W2001520983 date "2007-03-01" @default.
• W2001520983 modified "2023-09-27" @default.
• W2001520983 title "Growth of silicon carbide on hydrogen-terminated Si (001) 1×1 surfaces using dimethyl- and monomethyl silane" @default.
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• W2001520983 doi "https://doi.org/10.1016/j.diamond.2006.09.026" @default.
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