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• W2001567007 abstract "An electron paramagnetic resonance (EPR) spectrum labeled LE1 was observed in $n$-type 3C SiC after electron irradiation at low temperatures $(ensuremath{sim}80--100text{ }text{K})$. A hyperfine interaction with four nearest C neighbors similar to that of the well-known silicon vacancy in the negative charge state was observed, but the LE1 center has a lower symmetry, ${text{C}}_{2text{v}}$. Supercell calculations of different configurations of silicon vacancy-interstitial Frenkel-pairs, ${text{V}}_{text{Si}}{text{-Si}}_{text{i}}$, were performed showing that pairs with a nearest neighbor Si interstitial are unstable---${text{V}}_{text{Si}}$ and ${text{Si}}_{text{i}}$ will automatically recombine---whereas pairs with a second neighbor ${text{Si}}_{text{i}}$ are stable. Comparing the data obtained from EPR and supercell calculations, the LE1 center is assigned to the Frenkel-pair between ${text{V}}_{text{Si}}$ and a second neighbor ${text{Si}}_{text{i}}$ interstitial along the [100] direction in the $3+$ charge state, ${text{V}}_{text{Si}}^{ensuremath{-}}{text{-Si}}_{text{i}}^{4+}$. In addition, a path for the migration of ${text{Si}}_{text{i}}^{4+}$ was found in 3C SiC. In samples irradiated at low temperatures, the LE1 Frenkel-pair was found to be the dominating defect whereas EPR signals of single vacancies were not detected. The center disappears after warming up the samples to room temperature." @default.
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• W2001567007 date "2009-09-02" @default.
• W2001567007 modified "2023-10-08" @default.
• W2001567007 title "Identification of a Frenkel-pair defect in electron-irradiated 3<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi>C</mml:mi></mml:mrow></mml:math>SiC" @default.
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• W2001567007 doi "https://doi.org/10.1103/physrevb.80.125201" @default.
• W2001567007 hasPublicationYear "2009" @default.
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