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- W2001570346 abstract "In this paper we have analyzed the influence of the mask channel length (LM) on the performance of the 55‐nm‐hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs), incorporating nitrogen‐rich hydrogenated amorphous silicon nitride gate dielectric and phosphorus‐doped microcrystalline silicon (n+μc‐Si:H) source/drain (S/D) contacts. In our TFTs the n+μc‐Si:H S/D contacts have a specific contact resistance around or below 0.5 Ω cm2. We have shown that in our TFTs a field‐effect mobility and threshold voltage are dependent on LM, and this dependence is most likely due to the influence of the S/D contact series resistance on TFTs characteristics. Finally, we have demonstrated that if the mask channel length is extended by a ΔL (which is a distance from the S/D via edge at which the electron injection/collection is taking place) the field‐effect mobility and threshold voltage are independent of the channel length. In such a case μFE, VT, and ON/OFF current ratio around 0.76 cm2/V s, 2.5 V, and 107, respectively, has been obtained." @default.
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- W2001570346 date "1991-02-15" @default.
- W2001570346 modified "2023-09-25" @default.
- W2001570346 title "Performance of thin hydrogenated amorphous silicon thin‐film transistors" @default.
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- W2001570346 doi "https://doi.org/10.1063/1.348716" @default.
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