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- W2001754859 abstract "Conventional, split-drain MAGFETS have a low relative sensitivity. A modified device structure, the graded-gate FET (GFET), is presented. In the GFET the gate voltage varies linearly along the gate. Measured sensitivities for various geometries are reported, and the variation of sensitivity with the design parameters is discussed." @default.
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- W2001754859 date "1990-11-01" @default.
- W2001754859 modified "2023-09-26" @default.
- W2001754859 title "The graded-gate FET: a MOS device structure for magnetic field sensing applications" @default.
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- W2001754859 doi "https://doi.org/10.1088/0268-1242/5/11/007" @default.
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