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- W2001788008 abstract "A thin Cr oxide layer has been formed on a clean Si(111) surface at 40 K via N2O physisorption followed by Cr evaporation. In situ analysis with X-ray photoelectron spectroscopy indicated that Cr atoms arriving at the condensed N2O layer instantly form Cr oxide but negligible Cr nitride. The Cr atoms, which preferentially consume O in the condensed N2O layer, did not cluster themselves and the dissociated N2 desorbed. Prolonged X-ray irradiation led to dissociation of the remaining N2O, and the resulting dissociated O induced increased O coordination of the Cr oxide previously formed. The underlying Si substrate, on the other hand, was not oxidized until it was heated above 650°C. Such substrate disruption resulted in Cr oxide reduction at the interface. A comparative study with the reverse procedure, Cr evaporation followed by N2O physisorption, led to conclusion that the essential condition for forming thin Cr oxide without substrate disruption is the protection of the surface with a condensed N2O overlayer from the reactive Cr atoms." @default.
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- W2001788008 date "1996-12-01" @default.
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- W2001788008 title "Chromium oxide layer formed at 40 K by physisorption and thermal evaporation: Cr/N2O/Si(111)" @default.
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