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• W2001845349 abstract "Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered." @default.
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• W2001845349 date "2008-03-01" @default.
• W2001845349 modified "2023-10-18" @default.
• W2001845349 title "Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot" @default.
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• W2001845349 doi "https://doi.org/10.1016/j.apsusc.2007.11.036" @default.
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