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• W2001876596 abstract "Thin films of copper indium disulfide (CuInS2) are deposited on various substrates (In2S3/ZnO/SnO2/glass, ZnO/SnO2/glass), where In2S3 will be used as the optical window, ZnO as the optical window or wafer layer, CuInS2 as the absorber material in photovoltaic system and SnO2 as the ohmic contact. In2S3 is grown by chemical bath deposition; CuInS2, ZnO and SnO2 are grown by airless spray technique. The substrate temperature and the deposition duration of CuInS2 thin layer are fixed at 340 °C and 20 minutes respectively. The films were characterized by X-ray diffraction, Scanning electron microscope (SEM) and spectrophotometer. The X-ray diffraction revealed that the as-sprayed CuInS2 absorber films are of chalcopyrite crystalline phase with a highly (112) preferential orientation, the In2S3 deposited by CBD have a (400) preferential orientation, the ZnO sprayed thin films crystallizes in the hexagonal wurtzite form with a (002) principal orientation and the SnO2 films are well crystallized in the tetragonal structure and oriented preferentially in the (200) direction. The SEM showed that the thickness of the SnO2, ZnO, In2S3 and CuInS2 are 0.529; 0.684; 0.267 and 0.507 μm respectively. The optical band gap of the CuInS2 absorber material is 1,51 eV. The electrical properties of these structures are analysed from current-voltage (I-V) characteristics." @default.
• W2001876596 created "2016-06-24" @default.
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• W2001876596 date "2010-08-01" @default.
• W2001876596 modified "2023-09-30" @default.
• W2001876596 title "Characterization of heterojunctions based on airless spray deposited CuInS2 thin films on different underlayers" @default.
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• W2001876596 doi "https://doi.org/10.1016/j.egypro.2010.07.015" @default.
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