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• W2001906385 abstract "An accumulation metal–oxide–semiconductor (MOS) capacitor plays a key role in RF integrated circuits owing to its high linearity and independence of the operation frequency. The high-frequency capacitance–voltage ( C – V ) characteristics of a strained-Si/SiGe N-type MOS (NMOS) capacitor were studied to explain a measured behavior in which a “plateau” in the accumulation region was observed. By physically deriving the model of the NMOS capacitor, it was found that this plateau is substrate-doping-dependent and can also be strongly affected by the strained-Si layer thickness. The results from the model were compared with the experimental results and found to be in excellent agreement, indicating the validity of the model. The proposed model can provide valuable reference to the strained-Si device design and has been implemented in the software for extracting the parameter of a strained-Si MOSFET." @default.
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• W2001906385 date "2013-05-14" @default.
• W2001906385 modified "2023-09-25" @default.
• W2001906385 title "High-Frequency Capacitance–Voltage Characteristics of N-Type Metal–Oxide–Semiconductor Capacitor Based on Strained-Si/SiGe Architecture" @default.
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• W2001906385 doi "https://doi.org/10.7567/jjap.52.064201" @default.
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