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- W2001940900 abstract "TiO2 nanocrystals were successfully fabricated using an atomic-layer-deposition (ALD) system. A TiN/Al2O3-laminated structure was employed as a starting structure, and after appropriate annealing, TiN was oxidized and TiO2 nanocrystals were formed. Experimental results indicate that rapid thermal annealing (RTA) temperature and annealing time are very critical factors. Also, the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure is critical for TiO2 nanocrystal formation. Capacitance–voltage (C–V) measurement evidenced that an optimal annealing condition exists and an optimal annealing temperature and annealing time mainly depend on the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure." @default.
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- W2001940900 date "2007-04-24" @default.
- W2001940900 modified "2023-10-17" @default.
- W2001940900 title "TiO<sub>2</sub>Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application" @default.
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- W2001940900 doi "https://doi.org/10.1143/jjap.46.2523" @default.
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