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• W2001984193 abstract "Herein we report the synthesis of vertically aligned AlN nanostructures on conductive substrates through the chemical reaction between AlCl3 and NH3 in the temperature range of 650–850 °C. The morphologies of the AlN nanostructures could be controllably modulated from cone-like to rod-like geometries by increasing the reaction temperature. The formation mechanism of the AlN nanostructures on the nitrified Ti substrates has been discussed based on the analysis of the intermediate products. The field emission (FE) property of AlN nanocones grown on the nitrified Ti substrate is better than that for AlN nanocones on Si substrate. The improvement of FE property can be attributed to the lower resistance between AlN nanocones and the nitrified Ti substrate because the conductive titanium nitride film can directly contact with AlN emitters while a high-resistive silica layer would easily form between Si substrate and AlN nanocones. These results indicate that the deposition of nanoscale filed emitters on conductive substrates is an effective way to improve the FE behavior, and may find potential applications in FE devices." @default.
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• W2001984193 date "2012-02-01" @default.
• W2001984193 modified "2023-09-22" @default.
• W2001984193 title "Vertically aligned one-dimensional AlN nanostructures on conductive substrates: Synthesis and field emission" @default.
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• W2001984193 doi "https://doi.org/10.1016/j.vacuum.2011.02.012" @default.
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