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- W2002038082 abstract "Abstract This paper presents Single-Event Burnout (SEB) measurements on N-channel power MOSFETs which are developed in hardened technologies to be less sensitive to ion-induced SEGR. These devices were depicted as SEB free (Wheatley et al., 1996, IEEE Trans. Nuc. Sci., 43(6), 2944-2951). Measurements of SEB cross-section limits for hardened HARRIS FSL 110 are compared here with non-hardened IRF130 and the effect of size is evaluated." @default.
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- W2002038082 date "2000-05-01" @default.
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- W2002038082 title "Size effect on SEB cross-section of VDMOSFETS" @default.
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- W2002038082 doi "https://doi.org/10.1080/10420150008211823" @default.
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