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• W2002046008 abstract "Polycrystalline thin films of Ba0.5Sr0.5TiO3 were deposited by excimer laser (248 nm) ablation. Films deposited near 575 °C exhibited good crystallinity, a dielectric constant of 330, a dissipation factor of 0.02, a leakage current density of 2×10−7 A/cm2, a charge storage density of 36 fC/μm2, and breakdown time of 3700 s at an applied electric field of 0.125 MV/cm. The C-V (capacitance-voltage) behavior of both MFM (metal-ferroelectric-metal) and MFS (metal-ferroelectric-semiconductor) structures were studied and the estimated dielectric permittivity in the accumulation region of MFS structure nearly indicated the bulk value, suggesting a reasonably good Ba0.5Sr0.5TiO3/Si interface." @default.
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• W2002046008 date "1993-03-08" @default.
• W2002046008 modified "2023-09-29" @default.
• W2002046008 title "Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications" @default.
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• W2002046008 doi "https://doi.org/10.1063/1.108793" @default.
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