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• W2002058260 abstract "This work investigated the effects of interstitial oxygen [Oi] defects at the Si(111) surface on current conduction and charge trapping of metal-oxide-simiconductor devices with HfOxNy gate dielectric. Smaller gate leakage current, stress-induced leakage current (SILC) and defect generation rate, attributable to the decrease of [Oi] defect concentration at the HfOxNy∕Si interface, were observed for devices with denuded zone. The current-conduction mechanism of the HfOxNy films at the low- and high-electrical field was dominated by the Schottky and Frenkel–Poole emissions, respectively. The trapped charges in HfOxNy dielectric were positive. The mechanism related to the SILC at low-electrical field can be explained using the interface trap-assisted tunneling." @default.
• W2002058260 created "2016-06-24" @default.
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• W2002058260 date "2004-11-15" @default.
• W2002058260 modified "2023-10-18" @default.
• W2002058260 title "Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices" @default.
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• W2002058260 doi "https://doi.org/10.1063/1.1819994" @default.
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