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- W2002078654 abstract "In this paper we report in a systematic way on the evolution and distribution of dislocations in PVT 6H-SiC single crystals grown under different conditions. Using KOH defect etching and optical microscopy, we have performed dislocation tracking along the crystal lengths to study their evolution and propagation mechanisms based on statistics. In particular, crystal growth experiments with continuously increased temperature during the process time have been performed to investigate the role of temperature on dislocation formation and on their annihilation behavior. We discuss dislocation evolution and distribution in this particular PVT growth process as compared to those with a constant process temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2002078654 date "2006-02-21" @default.
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- W2002078654 title "Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H‐SiC single crystals" @default.
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- W2002078654 doi "https://doi.org/10.1002/pssc.200564152" @default.
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