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• W2002094411 abstract "Conventional H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and poly H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> Reaction-Diffusion (RD) models are compared, and the poly version is explored as a more physically likely model for predicting interface trap (N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IT</sub> ) generation during Negative Bias Temperature Instability (NBTI) in p-MOSFETs. Stochastic implementations of the conventional H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> RD model and the poly H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> RD model are realized, and their equivalence to continuum implementations are investigated for large area devices. Impact of dimensionality (1D, 2D, 3D) and device size (W, L) are explored for stochastic implementation. Stochastic simulations for small area devices using the poly H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> RD model show long term 1/6 power law time exponent during stress. A comprehensive framework consisting of H/H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> RD model for N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>IT</sub> along with empirical models for hole trapping (N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>HT</sub> ) and bulk trap generation (N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OT</sub> ) is able to predict experimental data for a wide variety of large area devices for different experimental conditions. Variation of small area device degradation has been simulated and compared to experimental results." @default.
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• W2002094411 date "2013-04-01" @default.
• W2002094411 modified "2023-09-23" @default.
• W2002094411 title "Investigation of stochastic implementation of reaction diffusion (RD) models for NBTI related interface trap generation" @default.
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• W2002094411 doi "https://doi.org/10.1109/irps.2013.6532120" @default.
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