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• W2002099095 abstract "Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies." @default.
• W2002099095 created "2016-06-24" @default.
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• W2002099095 date "2014-11-24" @default.
• W2002099095 modified "2023-09-24" @default.
• W2002099095 title "Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures" @default.
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• W2002099095 doi "https://doi.org/10.1063/1.4902814" @default.
• W2002099095 hasPublicationYear "2014" @default.
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