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- W2002105377 abstract "Using the Green function methods in the Feynman-path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band-structure models are used here and the absorption coefficeint is calculated directly from the Greenwood formula in the one-electron approximation. Two examples concerning Ge and GaAs are discussed assuming that one excess electron is provided by each donor. En utilisant les méthodes de fonctions de Green et l'intégrale de parcours de Feynman appliquées à des systemes désordonnés, déjà développées dans des articles antérieurs, l'absorption optique des semiconducteurs très dopés dans un champ magnétique nul à basse température est étudiée près du seuil. Deux modèles de structure de bande sont utilisés ici et le coefficient d'absorption est directement calculé à partir de la formule de Greenwood dans l'approximation à un électron. Deux examples concernant Ge et GaAs sont discutés en supposant que chaque atome d'impureté donne un électron." @default.
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- W2002105377 date "1972-08-01" @default.
- W2002105377 modified "2023-09-26" @default.
- W2002105377 title "Optical Absorption Edge of Heavily Doped Semiconductors at Low Temperatures" @default.
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- W2002105377 doi "https://doi.org/10.1002/pssb.2220520224" @default.
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