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• W2002109062 abstract "Microstructural analysis of power devices were carried out on components from Freescale Semiconductor that underwent extreme electrothermal fatigue. Several destructive and non destructive techniques were used. Altered layers are located on both sides of the Si substrate: at the heat sink (drain) and the Al metallization (source). Here, we have tried to establish a link between the increase of the transistor resistance and the amount of delamination of the solder at the die attach on one side and to the evolution of grain size and intergranular grooving on the other. Concerning the Al grain size, we will show that this parameter can be taken as a fatigue marker only in definite regions of the metallization. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2002109062 date "2007-07-01" @default.
• W2002109062 modified "2023-09-25" @default.
• W2002109062 title "Alterations induced in the structure of intelligent power devices by extreme electro-thermal fatigue" @default.
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• W2002109062 doi "https://doi.org/10.1002/pssc.200675492" @default.
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