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- W2002113218 endingPage "636" @default.
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- W2002113218 abstract "Submicron-sized samples with 42,000 finite elements containing up to ∼86 million atoms have been simulated using a concurrent atomistic-continuum method. The simulations reproduce not only nucleation and growth of semicircular dislocation loops in Cu and Al, but also hexagonal shuffle dislocation loops in Si, with the loop radius approaching ∼75 nm. Details of leading and trailing partial dislocations connected by intrinsic stacking faults, dislocation loop coalescence through annihilation, and formation of junctions are reproduced." @default.
- W2002113218 created "2016-06-24" @default.
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- W2002113218 date "2012-10-01" @default.
- W2002113218 modified "2023-10-18" @default.
- W2002113218 title "Nucleation and growth of dislocation loops in Cu, Al and Si by a concurrent atomistic-continuum method" @default.
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- W2002113218 doi "https://doi.org/10.1016/j.scriptamat.2012.07.026" @default.
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