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- W2002119559 abstract "FeSe0.1Te0.9 thin films were deposited on single crystal SrTiO3 (STO) (100) substrates by a pulse laser deposition (PLD) technique. CeO2 nanolayer was introduced as either cap layer or buffer layer to investigate its pinning effects in FeSe0.1Te0.9 thin films. The results show improved film quality after doping with CeO2 nanolayers, and no impurity phase was identified. All the samples achieve T c of 12.5 K, and in-field J c was greatly enhanced after doping with either cap or buffer CeO2 nanolayer for the field range up to 7 T. The buffered one shows the best self-field J c of 0.89 MA cm−2 at 4 K and a high upper critical field H c 2 of 186 T." @default.
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- W2002119559 date "2014-09-19" @default.
- W2002119559 modified "2023-10-06" @default.
- W2002119559 title "Nanostructured pinning centers in FeSe<sub>0.1</sub>Te<sub>0.9</sub>thin films for enhanced superconducting properties" @default.
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- W2002119559 doi "https://doi.org/10.1088/0953-2048/27/10/105006" @default.
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