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- W2002128209 abstract "Application of uniaxial stress along a particular crystallographic axis of a many-valley semiconductor causes up- and down-valleys in the momentum-energy space for electrons. The cyclotron resonance linewidth of the down-valley signals are broadened as a function of stress for certain doped germanium and silicon crystals. The electron transferred from up- to down-valley has an extra kinetic energy at the down-valley, corresponding to the valley energy difference, and the observed broadening is ascribed to the raised electron temperature there. From the broadening of the down-valley signal and observed down-to-up electron population ratio, the impurity-assisted intervalley scattering frequency is estimated for Ge/Ga, Ge/In and Si/P at 4.2°K. The magnitude is 1/20∼1/30 of the overall impurity scattering. There is an indication that it is strongly dependent of temperature." @default.
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- W2002128209 date "1969-02-01" @default.
- W2002128209 modified "2023-09-23" @default.
- W2002128209 title "Impurity-Assisted Intervalley Electron Scattering of Germanium and Silicon under Uniaxial Compression" @default.
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- W2002128209 doi "https://doi.org/10.1143/jpsj.26.413" @default.
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