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- W2002134479 abstract "Gallium was deposited on a tip specimen of a field ion microscope by making contact in vacuum. Gallium deposited on a tip area and diffused from the tip shank at 350 to 500 °K was crystallized in the pseudomorphic structure on tungsten. The number of atomic layers of the pseudomorphic gallium was 2 to 3. The sharp helium image of the pseudomorphic gallium appeared at a voltage considerably lower than the helium best-image voltage for tungsten. The observed high evaporation field of the pseudomorphic gallium, 3.0–4.5 V/Å, may indicate that the gallium atoms in the pseudomorphic state are anomalously strongly bound to the substrate tungsten or are field evaporated as the doubly-ionized ions. Various superstructures were observed on the {112} areas after heating above 900 °K, but their detailed structures did not depend upon temperature or heating time. An unidentified underlayer may play a dominant role in determining the structure of the superstructures. No clear evidence of alloy formation was noticed in the temperature range 21 to 1500 °K." @default.
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- W2002134479 date "1973-03-01" @default.
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- W2002134479 title "Field ion microscope study on the interaction of gallium with metals. I. Pseudomorphic structure and superstructures on tungsten" @default.
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- W2002134479 doi "https://doi.org/10.1063/1.1662377" @default.
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