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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2002142431> ?p ?o ?g. }

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• W2002142431 abstract "A two-dimensional numerical device simulator has been developed specially for the recessed gate 4H silicon carbide(4H-SiC) metal–semiconductor field-effect-transistor (MESFET). By combining numerical techniques, material physics, and measured device characteristics, we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field curves, and the Schottky barrier height. We have also enabled and used the new simulator to investigate breakdown voltage and thus predict operation limitations of the 4H-SiC device. Simulations indicate that impact ionization is relatively small in 4H-SiC, thereby leading to a very high breakdown voltage of 125 V in a 0.7 μm gate MESFET." @default.
• W2002142431 created "2016-06-24" @default.
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• W2002142431 date "1998-08-15" @default.
• W2002142431 modified "2023-10-11" @default.
• W2002142431 title "Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics" @default.
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• W2002142431 doi "https://doi.org/10.1063/1.368267" @default.
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