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- W2002148961 abstract "Strained layer superlattices based on Sb semiconductor material are proposed for long wavelength photodetector applications. Theoretical studies on the band structure of AlGaSb/GaSb, AlInSb/InSb, and GaInSb/InAs superlattices show that the wavelength coverage can be extended from 0.5 to 30 micrometer. Optical absorptions of the superlattices are calculated taking into account the intermixing effect at different diffusion lengths. Responsivity and detectivity of the GaInSb/InAs superlattice detector are also analyzed. Blue shift of responsivity is observed for increased intermixing and the detectivity D<SUP>*</SUP> at 77 K is increased by more than one fold in magnitude as R<SUB>0</SUB>A increases linearly with intermixing." @default.
- W2002148961 created "2016-06-24" @default.
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- W2002148961 date "2000-07-14" @default.
- W2002148961 modified "2023-09-23" @default.
- W2002148961 title "Infrared photodetectors based on Sb materials" @default.
- W2002148961 doi "https://doi.org/10.1117/12.391483" @default.
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