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• W2002152315 abstract "Native vacancy defects are studied in as-grown GaAs materials by positron-lifetime measurements. Direct evidence of native monovacancy-type defects is found in as-grown n-type Te-, Sn-, and Si-doped GaAs. However, the same evidence is not found in as-grown semi-insulating In- or Cr-doped GaAs or semi-insulating undoped GaAs or p-type GaAs(Zn). It is shown that the positron trapping and annihilation in the native defects are strongly dependent on the position of the Fermi level in as-grown n-type GaAs. It is concluded that the configurations of the native monovacancy defects in GaAs (Te or Sn) change with the position of Fermi level. Two Fermi-level-controlled transitions are found: one is located at 0.035ifmmodepmelsetextpmfi{}0.015 eV and the other at 0.10ifmmodepmelsetextpmfi{}0.02 eV below the conduction band. It is proposed that the two transitions correspond to two charge-state transitions of the arsenic vacancy ${V}_{mathrm{As}{}^{2mathrm{ensuremath{-}}}ensuremath{rightarrow}{V}_{mathrm{As}{}^{mathrm{ensuremath{-}}}}}$ and ${V}_{mathrm{As}{}^{mathrm{ensuremath{-}}}ensuremath{rightarrow}{V}_{mathrm{As}{}^{0}}}$, respectively." @default.
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• W2002152315 date "1988-10-15" @default.
• W2002152315 modified "2023-09-30" @default.
• W2002152315 title "Positron-annihilation spectroscopy of native vacancies in as-grown GaAs" @default.
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• W2002152315 doi "https://doi.org/10.1103/physrevb.38.8192" @default.
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