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- W2002170074 abstract "GaN epilayers have been grown on (0001) sapphire substrates with a specially designed two-flow horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. Epilayers with flat and smooth surfaces were obtained at the growth temperature of 950°C with relatively low source supply rates. This indicates a relatively high growth efficiency of the reactor. Characterization by photoluminescence, X-ray diffraction and Hall measurements reveal that the epilayers are of reasonably high quality." @default.
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- W2002170074 date "1997-01-01" @default.
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- W2002170074 title "MOVPE of GaN using a specially designed two-flow horizontal reactor" @default.
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- W2002170074 doi "https://doi.org/10.1016/s0022-0248(96)00598-2" @default.
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