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• W2002177833 abstract "A surface must be clean and atomically flat to enable a unique and simple interpretation of results. In many fundamental studies clean surfaces are used, whereas flatness is checked only qualitatively or simply assumed to be present. Therefore in the present investigation cleaved surfaces of Si and Ge have been studied systematically with respect to deviations from the flat surface. By using LEED, electron microscopy and a novel optical reflection technique several parameters have been determined: angles of inclination, the average angle, atomic step height, orientation and arrangement of steps, and average edge atom density. A description of the shape of a cleaved surface is given by a combination of various results. Since about 1–5 % of all surface atoms are in edge position, those atoms may be very important with respect to electronic and photoelectric properties." @default.
• W2002177833 created "2016-06-24" @default.
• W2002177833 creator A5020266391 @default.
• W2002177833 date "1973-04-01" @default.
• W2002177833 modified "2023-10-17" @default.
• W2002177833 title "The roughness of cleaved semiconductor surfaces" @default.
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• W2002177833 doi "https://doi.org/10.1016/0039-6028(73)90249-5" @default.
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