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- W2002195508 abstract "n-type and undoped GaAs samples have been irradiated with 2 MeV electrons in stages at room temperature up to high electron doses of approximately=3*1019 electron/cm2. At each stage the concentration of paramagnetic defects was monitored by EPR. In the n-type sample a signal previously ascribed to uncomplexed AsGa antisite defects grew rapidly, reached a maximum, subsequently decreased in strength and then grew again almost linearly. In the undoped samples the signal grew almost linearly over the whole dose range. The authors explain these results by postulating the existence of at least two defects which give rise to indistinguishable EPR signals. Annealing and re-irradiation studies on n-type samples provide evidence that the initial growth of the EPR signal is due to a change in the charge state of the defects which are probably complexes involving AsGa centres such as (AsGa-VGa) or (VAs-AsGa-Gai) rather than isolated AsGa defects." @default.
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- W2002195508 date "1985-06-20" @default.
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- W2002195508 title "The observation of antisite defects in n-type and undoped GaAs following electron irradiation and annealing" @default.
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