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- W2002197857 abstract "We report on the structural and optical properties of Ge/Si self-assembled quantum dots epitaxially grown on Si(001). The Ge islands are grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The surface density of the Ge islands is as much as 2×1010 cm−2. The islands exhibit a maximum photoluminescence at 1.55 μm wavelength. The photoluminescence energy is correlated to the three-dimensional quantum confinement energy and to the size and geometry of the clusters, as observed by cross-section transmission electron microscopy." @default.
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- W2002197857 date "1999-07-15" @default.
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- W2002197857 title "Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor" @default.
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- W2002197857 doi "https://doi.org/10.1063/1.370856" @default.
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