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- W2002283886 abstract "Abstract The dielectric properties of oxides formed on Ta-Al-N films were investigated. The capacitors made from these films exhibit excellent a.c. and d.c. properties and are comparable in performance with TaN capacitors. Owing to the high resistivity of Ta-Al-N films an aluminum underlayer was used for these capacitors to reduce losses at high frequencies. It is concluded that these capacitors are more desirable for applications in hybrid integrated circuits when used together with Ta-Al-N resistors." @default.
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- W2002283886 date "1980-10-01" @default.
- W2002283886 modified "2023-09-27" @default.
- W2002283886 title "Properties of thin film capacitors made with reactively sputtered Ta-Al" @default.
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- W2002283886 doi "https://doi.org/10.1016/0040-6090(80)90528-3" @default.
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