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- W2002308497 abstract "Effects of residual surface nitrogen, remaining on the Si surface after stripping off tunneling oxynitrides (N/sub 2/O-grown or NH/sub 3/-nitrided oxides), on the quality of the regrown gate oxides are studied. Residual surface nitrogen is observed to reduce the breakdown field and degrade the time-dependent dielectric breakdown (TDDB) characteristics of the subsequently grown gate oxides. Results show that oxide regrowth in N/sub 2/O, rather than O/sub 2/, can significantly suppress these undesirable effects.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2002308497 date "1993-05-01" @default.
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- W2002308497 title "Effects of residual surface nitrogen on the dielectric breakdown characteristics of regrown oxides" @default.
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- W2002308497 doi "https://doi.org/10.1109/55.215188" @default.
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