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• W2002339984 abstract "Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) of ~14 mV/dec and a high on-current of ~300 μm are estimated theoretically. The SS is ultimately limited by the density of states broadening at the band edges and the on-current density is estimated based on the interlayer charge transfer time measured in recent experimental studies. To minimize supply voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DD</sub> while simultaneously maximizing on currents, Thin-TFETs are best realized in heterostructures with near broken gap energy band alignment. Using the WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /SnSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> stacked-monolayer heterostructure, a model material system with desired properties for Thin-TFETs, the performance of both n-type and p-type Thin-TFETs is theoretically evaluated. Nonideal effects such as a nonuniform van der Waals gap thickness between the two 2-D semiconductors and finite total access resistance are also studied. Finally, we present a benchmark study for digital applications, showing the Thin-TFETs may outperform CMOS and III-V TFETs in term of both switching speed and energy consumption at low-supply voltages." @default.
• W2002339984 created "2016-06-24" @default.
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• W2002339984 date "2015-05-01" @default.
• W2002339984 modified "2023-10-06" @default.
• W2002339984 title "Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)" @default.
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• W2002339984 doi "https://doi.org/10.1109/jeds.2015.2390643" @default.
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