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- W2002362021 abstract "Abstract We have succeeded in growing Pr x Os 4 Sb 12 single crystals under ~ 4 GPa with high Pr-site filling fraction x. The electrical resistance measurements clearly show that the superconducting (SC) transition is sharper and the onset temperatures is lower in the single crystal samples grown under high pressure compared to that of the sample grown under ambient pressure. These results suggest that the double SC transition ascribed to sample inhomogeneity is suppressed in the sample grown under high pressure. The change of 4f-electron crystalline electric field energy splitting between the Γ 1 ground state and the Γ 4 ( 2 ) first excited state in the sample made under high pressure is proposed as one of the possible origins of the suppression of the double SC transition." @default.
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- W2002362021 date "2009-10-01" @default.
- W2002362021 modified "2023-09-27" @default.
- W2002362021 title "Transport properties ofPrxOs4Sb12single crystals with high Pr-site filling fraction grown under high pressure" @default.
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- W2002362021 doi "https://doi.org/10.1016/j.physb.2009.07.023" @default.
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