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• W2002425107 abstract "We investigate the Raman intensity of E2H phonons in wurtzite GaAs nanowire ensembles as well as single nanowires as a function of excitation wavelength. For nanowires with radii in the range of 25 nm, an almost complete quenching of the E2H phonon line is observed for excitation wavelengths larger than 600 nm. The observed behavior is quantitatively explained by the dielectric polarization contrast for the coupling of light into the GaAs nanowires. Our results define the limits of Raman spectroscopy for the detection of the wurtzite phase in semiconductor nanowires." @default.
• W2002425107 created "2016-06-24" @default.
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• W2002425107 date "2013-07-22" @default.
• W2002425107 modified "2023-10-10" @default.
• W2002425107 title "Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast" @default.
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• W2002425107 doi "https://doi.org/10.1063/1.4817078" @default.
• W2002425107 hasPublicationYear "2013" @default.
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