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• W2002450648 abstract "We report on the critical layer thickness of InxGa1−xAs on GaAs grown at low substrate temperatures in a wide range of indium compositions. Compared with ordinary growth conditions, the transition between pseudomorphic and relaxed regions (in the epilayer thickness versus x plane) occurred at higher indium compositions when the growth temperature was lowered. An increase in critical thicknesses for pseudomorphic growth by at least a factor of seven for alloy compositions with less than 45% indium was observed. This was determined by low temperature photoluminescence spectroscopy and transmission electron microscopy measurements on single quantum wells." @default.
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• W2002450648 date "1991-09-01" @default.
• W2002450648 modified "2023-10-18" @default.
• W2002450648 title "Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs grown on GaAs" @default.
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• W2002450648 doi "https://doi.org/10.1063/1.349376" @default.
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