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- W2002590145 abstract "A 1700 V 60 A SiC MOSFET has been fabricated and the high-speed switching characteristics are evaluated. The SiC MOSFET is designed to have low internal gate resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Gin</sub> ) in order to realize the high-speed switching without parasitic turn-on of the opposite SiC MOSFET in a half bridge. By using the developed SiC MOSFETs, a 1700 V 360A power module with very low parasitic inductance structure has been fabricated to enable high speed switching operations." @default.
- W2002590145 created "2016-06-24" @default.
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- W2002590145 date "2014-06-01" @default.
- W2002590145 modified "2023-10-16" @default.
- W2002590145 title "High-speed and low switching loss operation of 1700 V 60 A SiC MOSFETs installed in low parasitic inductance module" @default.
- W2002590145 cites W2084184672 @default.
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- W2002590145 doi "https://doi.org/10.1109/ispsd.2014.6856033" @default.
- W2002590145 hasPublicationYear "2014" @default.
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