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- W2002596324 abstract "A study of the residual impurities present in GaAs layers grown by metal-organic vapor phase epitaxy has been conducted. Gallium arsenide layers were grown from three different trimethylgallium sources as a function of the substrate temperature and the arsine partial pressure which are the main factors controlling the concentration of residual impurities. A study of the low temperature photoluminescence spectra of the layers supported by preliminary secondary ion mass spectroscopy measurements shows that the major residual acceptors are carbon, magnesium, and zinc." @default.
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- W2002596324 title "Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxy" @default.
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