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- W2002602167 abstract "In order to utilise both techniques in the best and easiest way, thermal nanoimprint(T-NIL) and optical/UV lithography (UVL) were combined in a hybrid process to patternthe same resist layer. Typically, T-NIL as the first step defines the small, submicronpatterns, UVL as the second step the larger patterns, well above 1 μm. The hybrid processis performed with a conventional Si stamp for imprint and a conventional photomask forUVL and does not require any special infrastructure. Conventional, commercially availablepositive and negative tone resists were used, SU-8 and AR-P 3510. In the case of SU-8, achemically amplified negative resist with low glass temperature, the imprint is uncriticaland does not result in any optical degradation. However, the post exposure bake required tofinalise the crosslink reaction has to be adapted and performed as a temperature ramp. Inthe case of AR-P 3510 the imprint step is critical, as the photoactive component isdegenerated at suitable imprint temperatures. We found that at temperatures up to 130°Cthis degradation can be compensated by an increase of the exposure dose. Though morecritical in processing, the positive tone resist features a better definition of the transitionregion between imprinted patterns and UV patterns." @default.
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- W2002602167 date "2010-02-03" @default.
- W2002602167 modified "2023-09-23" @default.
- W2002602167 title "Positive or negative tone resist for a T-NIL/UVL hybrid process" @default.
- W2002602167 doi "https://doi.org/10.1117/12.863199" @default.
- W2002602167 hasPublicationYear "2010" @default.
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