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- W2002813765 abstract "The one-phonon resonant Raman scattering of tetragonal zinc-blende-like semiconductors is presented and applied to II–III2–V I4 ordered-vacancy compounds, in particular to ZnGa2Se4. The well-known theory of one-phonon resonant Raman scattering in III–V or II–VI polar semiconductors has been extended to the tetragonal symmetry of these materials in the approximation that they can be considered as slightly distorted zinc-blende compounds. This approach is especially valid for the high frequency B+E modes that arise from the zone centre optical mode of the zinc-blende structure and show, in an ordered-vacancy compound, a very small tetragonal splitting. The LO components of these modes, BLO and ELO, are considered. The contribution of the different excitonic transitions to the scattering process is studied. Deformation potential and Frohlich interaction are considered as exciton–phonon interaction mechanisms. Emphasis is placed in the discussion on aspects related to symmetry lowering. Interference effects between excitonic resonances are also discussed." @default.
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- W2002813765 date "2004-11-06" @default.
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- W2002813765 title "One-phonon resonant Raman scattering of high frequency pseudocubic modes in zinc-blende-like tetragonal semiconductors" @default.
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- W2002813765 doi "https://doi.org/10.1088/0953-8984/16/46/021" @default.
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