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- W2002898032 abstract "The high defect density in GaAs grown on Si can be reduced by the combined use of the strained superlattices (InGaAs-GaAsP) and annealing. The strained-layer superlattice (SLS) bends the dislocations and acts as a medium for dislocations interactions, and annihilations. Highly strained SLS (∼2%) is required to bend the dislocations and keep them bent at the SLS interfaces. The SLS coupled with annealing permits a remarkable reduction of threading dislocation density. Annealing provides the energy for threading dislocations to interact with the SLSs and improves their efficiency significantly." @default.
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- W2002898032 date "1989-10-02" @default.
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- W2002898032 title "Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substrates" @default.
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- W2002898032 doi "https://doi.org/10.1063/1.101581" @default.
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