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- W2002979925 abstract "Dislocations in device silicon have been thermally generated. The thermal conditions of the wafer while being cycled in a diffusion furnace have been numerically modeled. These numerical results form the basis for establishing the thermal conditions of the wafer when dislocations are induced during thermal cycling." @default.
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- W2002979925 date "1972-04-01" @default.
- W2002979925 modified "2023-09-23" @default.
- W2002979925 title "Thermal Conditions When Dislocations Are Generated in Silicon" @default.
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- W2002979925 doi "https://doi.org/10.1063/1.1661344" @default.
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