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• W2002984277 startingPage "375303" @default.
• W2002984277 abstract "Abstract A TiO 2 thin film was deposited on a Nb : SrTiO 3 substrate by pulsed laser deposition to form an Ag/TiO 2 /Nb : SrTiO 3 /In device. The bipolar resistive switching (RS) effect of this device was investigated. The current–voltage characteristics exhibited pronounced and stable bipolar RS features. The device could be switched to a low resistance state (LRS) at forward voltage and returned to a high resistance state (HRS) at reverse voltage, and the RS ratio R HRS / R LRS reached up to 2 × 10 3 at a read voltage of −0.5 V. Moreover, the RS ratio could be adjusted by changing the maximum value of the forward or reverse voltage, which shows promise for multilevel memories. These results are discussed by considering carrier injection-trapped/detrapped process of the heterostructure and show high potential for nonvolatile memory applications." @default.
• W2002984277 created "2016-06-24" @default.
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• W2002984277 date "2012-08-30" @default.
• W2002984277 modified "2023-10-18" @default.
• W2002984277 title "Nonvolatile bipolar resistive switching in an Ag/TiO₂/Nb : SrTiO₃/In device" @default.
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• W2002984277 doi "https://doi.org/10.1088/0022-3727/45/37/375303" @default.
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