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• W2003043123 abstract "2.2 MeV 4He+ and 7 MeV 15N2+ ion beams have been used to investigate, by in situ measurements, the hydrogen desorption processes in SiO2 thin films deposited by plasma enhanced chemical vapor deposition (PECVD). An effective cross-section of 3 × 10−16 cm2 for He and 17 × 10−16 cm2 for N has been measured for the ion-thin-film interaction phenomena. The structure crystalline silicon/thermally grown SiO2/PECVD film has also been investigated for the hydrogen radiation-enhanced diffusion in thermally grown SiO2. The data are consistent with a diffusion process with a diffusion coefficient of (5.0 ± 0.5) × 10−26 cm2/ion from a constant source at a concentration C0 = (2.5 ± 0.2) × 1021 at/cm3." @default.
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• W2003043123 date "1997-08-01" @default.
• W2003043123 modified "2023-10-14" @default.
• W2003043123 title "Radiation enhanced transport of hydrogen in SiO2" @default.
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• W2003043123 doi "https://doi.org/10.1016/s0022-3093(97)00174-9" @default.
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