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• W2003120478 endingPage "2008" @default.
• W2003120478 startingPage "2006" @default.
• W2003120478 abstract "Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film having the ordered L21 structure as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co50Fe50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co50Fe50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K." @default.
• W2003120478 created "2016-06-24" @default.
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• W2003120478 date "2007-03-01" @default.
• W2003120478 modified "2023-09-27" @default.
• W2003120478 title "Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier" @default.
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• W2003120478 doi "https://doi.org/10.1016/j.jmmm.2006.10.919" @default.
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