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• W2003131854 abstract "The surface properties of GaN films grown by plasma-assisted molecular beam epitaxy were investigated by using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, while the depth profile was analysed by the Ar ion sputtering method. The contaminants carbon and silicon are chiefly adsorbed onto the surface while oxygen and aluminium diffuse into the bulk to distribute in a certain depth. The mixture oxides is roughly 0.1 µm in thickness. Based on the analytical results of XPS of the GaN films, the Ni/Cr/Au interdigital metal-semiconductor-metal (MSM) structure has been fabricated. It has been found that the contact behaviour of the Ni/Cr/Au/undoped GaN exhibits a linear I-V characteristic under dark and 362-nm light excitation without annealing treatment. The lower resistance of the MSM structure has also been observed." @default.
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• W2003131854 date "2003-09-24" @default.
• W2003131854 modified "2023-09-30" @default.
• W2003131854 title "Surface Properties of Unintentionally Doped GaN Film and Its Contact Behaviour with Ni/Cr/Au Compound Metals" @default.
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• W2003131854 doi "https://doi.org/10.1088/0256-307x/20/10/353" @default.
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