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• W2003139070 abstract "Nous avons étudié, par diffraction d'électrons lents, diffraction d'électrons rapides et spectroscopie Auger, l'interaction du palladium avec des faces vicinales de Si(111). Pour tous les dépôts de palladium (l'épaisseur maximale moyenne de palladium déposé est d'environ 20 Å) sur des marches orientées vers [211], un recuit à haute température (600–1000°C) induit des facettes (122) reconstruites 2×2. Pour des taux de recouvrements inférieurs à la monocouche, on observe une structure (3×1) suivant une seule orientation, après recuit à 200°C. Pour des taux de recouvrement plus importants (5–10 Å), un recuit produit des îlots de Pd2Si en épitaxie sur le silicium. Dans le cas de marches orientées suivant [211], pour des dépôts de palladium d'épaisseur inférieure à 10 Å, un recuit à des températures comprises entre 200 et 400 °C donne des îlots de Pd2Si en épitaxie sur le support. La structure de surface de ces îlots est Si(111)√3×√3R(30°). Entre ces îlots, la surface de silicium présente la structure Si(111)3×1 Pd. Pour des épaisseurs importantes (10–20 Å) un recuit à 400°C donne la structure Si(111)3√3×3√3R(30°). Ces résultats sont semblables à ceux que nous avons observés sur les surfaces clivées (111). The structural properties of palladium deposited onto clean silicon surfaces inclined at small angles to a (111) plane were studied by low energy electron diffraction, reflection high energy electron diffraction and Auger electron spectroscopy techniques. For all palladium deposits (the maximum mean thickness of palladium condensed is about 20 Å) on steps with edges towards [211], annealing at high temperatures (600–1000°C) produces (122) facets with 2×2 reconstruction. Also at low coverage (1 monolayer), only a (3×1) structure in a single orientation is observed after an annealing at 200°C. For higher coverage (5 to 10 Å), annealing produces epitaxial Pd2Si islands. In the case of steps with edges towards [211] annealing of palladium deposits smaller than 10 Å at temperatures between 200 and 400°C gives flat smooth Pd2Si islands epitaxially grown on the substrate. The surface structure of these islands is Si(111)√3×√3R(30°). Between these islands, the silicon surface presents the structure Si(111)3×1 Pd. For higher coverage (10–20 Å) annealing at 400°C gives a Si(111)3√3×3√3R(30°) structure. These results are the same as those we have observed on cleaved (111) surfaces." @default.
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• W2003139070 title "Étude de l'adsorption du palladium sur les faces vicinales de Si(111) par diffraction d'électrons rapides, diffraction d'électrons lents et spectroscopie Auger" @default.
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• W2003139070 doi "https://doi.org/10.1016/0040-6090(86)90128-8" @default.
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