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- W2003142011 abstract "Nonvolatile memory devices with TiSi2 and WSi2 nanocrystals on the SiO2/Si3N4/SiO2 (ONO) and Si3N4/SiO2/Si3N4 (NON) tunnel layers were fabricated and their electrical properties were characterized. For the WSi2 nanocrystals memory, the threshold voltage shift (ΔVTH) maintained about 1.3 V at 125 °C, when program/erase (P/E) speeds were 50 ms. After P/E at ±7 V for 100 ms, ΔVTH of the TiSi2 memory with NON tunnel layer was about 0.7 V, while ΔVTH of the WSi2 memory with ONO tunnel layer was approximately 1 V after applied P/E pulse at ±8 V for 50 ms." @default.
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- W2003142011 date "2011-01-01" @default.
- W2003142011 modified "2023-10-17" @default.
- W2003142011 title "Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory" @default.
- W2003142011 doi "https://doi.org/10.1063/1.3666689" @default.
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