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- W2003142718 abstract "An ion-beam mixing technique is used to fabricate ultrashallow p+/n junctions. In this method, a thin boron layer is first sputter deposited onto the Si wafer surface. Then a 10–40 keV Ge ion beam or −3 kV Ar plasma source ion implantation (PSII) is used to knock the boron atoms into the Si substrate by means of ion-beam mixing. For the thin (0.7 nm) boron layers used in this effort, a selective etch for the removal of boron is unnecessary. Sub-100 nm p+/n junctions have been realized with this method. Numerical simulations, performed to predict the recoiled boron profiles, show good agreement between the simulated and measured data." @default.
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- W2003142718 date "1998-01-01" @default.
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- W2003142718 title "Recoil implantation of boron into silicon for ultrashallow junction formation: Modeling, fabrication, and characterization" @default.
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- W2003142718 doi "https://doi.org/10.1116/1.589823" @default.
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