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- W2003145439 abstract "The initial formation of several metal–GaAs(110) interfaces has recently been reexamined by evaporating the metal on the semiconductor surface cooled to 70–100 K. Overlayer homogeneity and metal-induced unrelaxation are increased at low temperature (LT), whereas clustering, interdiffusion, and chemical reactions are substantially inhibited. Ag and Au interfaces with n- and p-GaAs were studied with soft x-ray and ultraviolet photoemission spectroscopies (SXPS, UPS) and low-energy electron diffraction. Both interfaces displayed the very asymmetric LT pinning of the Fermi level (EF) reported earlier: (1) fast EF movement at ultralow coverage (<0.1 Å) on p-GaAs and slow EF movement up to ∼2 Å on n-GaAs and (2) transition around 2 Å with a sharp drop of EF on n-GaAs toward its high-coverage position and concomitant but small shift of EF on p-GaAs. SXPS and UPS measurements of the LT Ag 4d and Au 5d valence bands show a sharp increase in the full width at half-maximum from values characteristic of isolated atoms or small clusters to values characteristic of metallic layers at precisely the same coverage. These results therefore point out a correlation between high-coverage (>2 Å) pinning and appearance of metallic character in the overlayer." @default.
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- W2003145439 date "1988-05-01" @default.
- W2003145439 modified "2023-09-26" @default.
- W2003145439 title "Metal‐induced gap states at the Ag and Au/GaAs interfaces" @default.
- W2003145439 doi "https://doi.org/10.1116/1.575351" @default.
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